Evolution of surface recombination property of silicon wafers during laser irradiation by differential photocarrier radiometry

Understanding the surface recombination property of semiconductor materials is beneficial for improving performance optoelectronic devices. In this paper, differential photocarrier radiometry (PCR) carried out to investigate evolution velocities silicon wafers induced by laser irradiation. The PCR signal and were found be strongly dependent on quality wafer duration native oxide was more susceptible irradiation than Al2O3 passivated due defects being annealed. A surface-defect annealing model used explain transient behavior velocity.